| 摘要 |
A method for fabricating a semiconductor device is provided to effectively remove a lift prevention oxide layer and an etch stop layer positioned on a bottom electrode contact plug. An opened portion is formed on an interlayer dielectric layer(103) of a substrate(101). The opened portion is buried with a plug material to form a plug protruding from the interlayer dielectric. A lift prevention layer(106) and an etch stop layer(107) are formed on the substrate having the protruding plug. A sacrificial layer for a bottom electrode(110) is formed on the etch stop layer, and then the sacrificial layer, the lift prevention layer and the etch stop layer are etched to expose the plug. The bottom electrode is formed to be connected to the plug.
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