| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element with improved temperature characteristics, and to provide its manufacturing method. SOLUTION: The semiconductor laser element comprises an MQW structure active layer, a p-type second clad layer, a p-type first clad layer sequentially deposited on an n-type clad layer provided on an n-type GaAs substrate. The n-type clad layer and the p-type first clad layer are structured in lattices matching the GaAs substrate, a negative-strain layer is provided in an intermediate layer of the first clad layer, and a positive-strain layer is provided on both the sides, or on one side of the negative-strain layer. COPYRIGHT: (C)2008,JPO&INPIT
|
