| 摘要 |
PROBLEM TO BE SOLVED: To prevent the destruction of a gate insulation film of a sensing cell by rapid surge. SOLUTION: A gate electrode 26 is shared by IGBT 5a in a main cell and IGBT 5b in the sensing cell. Due to this structure, the number of stages of a CR parallel circuit increases in a former stage of the sensing cell, causing rapid surge current to flow not only to the sensing cell but also to the main cell without a break. Thereby, the impedance viewed from the sensing cell side is reduced, so that an increase in gate potential of the IGBT 5b in the sensing cell can be suppressed. Consequently, destruction of the gate insulation film 25 along with an increase in voltage of the gate electrode 26 can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
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