| 摘要 |
PROBLEM TO BE SOLVED: To introduce fluorine of full concentration into a film while damages to an insulating film and a substrate interface is avoided so as to obtain initial characteristics and the reliability of a transistor by introducing fluorine during film formation of a material of high dielectric constant. SOLUTION: In a semiconductor device manufacturing method for forming a gate insulating film between a semiconductor region and a gate electrode, the gate insulating film is formed of a metal oxide film, containing fluorine in the film or a metal silicate film containing fluorine by atomic layer deposition. COPYRIGHT: (C)2008,JPO&INPIT
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