| 摘要 |
A TMR element is provided which has a large MR ratio. The TMR element has a tunnel barrier layer formed between a magnetization fixed layer and a magnetization free layer, and a cap layer disposed on the magnetization free layer. The tunnel barrier layer is formed of an MgO film. The magnetization free layer is formed of a CoFeB film. The cap layer is formed by forming a Ti film immediately above the CoFeB film such that the Ti film is in contact with the CoFeB film. This makes it possible to largely enhance the MR ratio of the TMR element. Further, by using the TMR element for a magnetic head and an MRAM, it is possible to improve the performance of magnetic heads and MRAMs.
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