| 摘要 |
An isolation layer of a semiconductor device and a forming method thereof are provided to easily bury a T-shaped trench with an oxide layer for the isolation layer, without forming voids. A mask pattern for exposing a region for forming an isolation layer is formed on a silicon substrate(21), and then the exposed portion of the substrate is etched by using the mask pattern to form trenches. A sidewall oxide layer(25) and a liner nitride layer(26) are formed on the entire surface of the mask pattern. The liner nitride layer, the sidewall oxide layer, the mask pattern and the substrate are etched to form T-shaped trenches having an upper end wider than a lower end. An oxide layer for an isolation layer is buried in the T-shaped trench, and then the mask pattern is removed.
|
