发明名称 Wafer with semiconductor devices and method of manufacturing the same
摘要 It is an object of the invention to improve wafer level packaging processes, in particular so as to enable for reduced bond pad or terminal pitches. For that purpose, a method for fabricating a wafer substrate for semiconductor circuits is provided, whereby -etch pits are introduced into a wafer having a first side and an opposite second side, and -conducting material is deposited into the etch pits, so that blind conducting channels are formed which extend from the first side of the wafer into the wafer substrate, and whereby the blind conducting channels are formed prior to fabricating or finishing semiconductor circuits on the first side of the wafer.
申请公布号 EP1906441(A1) 申请公布日期 2008.04.02
申请号 EP20060020513 申请日期 2006.09.29
申请人 SCHOTT ADVANCED PACKAGING SINGAPORE PTE. LDT. 发明人 GAUTHAM, VISWANADAM;SPARSCHUH, GEORG;MUECKE, KLAUS W.;LEIB, JUERGEN, DR.
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
代理机构 代理人
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