发明名称 |
Thin film transistor, electro-optical device and electronic apparatus |
摘要 |
<p>A thin film transistor (60) includes a semiconductor layer formed over a substrate (P), and an electrode member formed over the substrate by a liquid phase method. The electrode member includes a base layer (67) composed of a metal material and an outer surface layer deposited on at least one surface of the base layer. The outer surface layer is formed of a metal material that is less susceptible to being dissolved in silicon and a silicon compound compared with the metal material constituting the base layer.</p> |
申请公布号 |
EP1650807(A3) |
申请公布日期 |
2008.04.02 |
申请号 |
EP20050022117 |
申请日期 |
2005.10.11 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KOBAYASHI, YOSUKE |
分类号 |
H01L29/45;H01L21/336;H01L21/84;H01L27/12;H01L29/49 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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