Method of manufacture of an electromechanical component on a planar substrate

摘要

The method involves forming a germanium and silicon alloy based sacrificial layer through a selective epitaxy from uncovered part of an upper surface of a plane substrate (15). A strongly doped silicon layer (20) having a monocrystalline zone on the sacrificial layer and a polycrystalline zone on an insulating zone (18) is formed through epitaxy. An activation electrode (23) and a vibrating structure (22) are formed by engraving, in the monocrystalline zone, and a preset pattern forms a space between the electrode and the structure. The sacrificial layer is eliminated.