发明名称 APPARATUS OF TREATING SUBSTRATE USING PLASMA
摘要 A plasma processing apparatus is provided to adjust a capacitive coupling plasma effect between a reaction gas and a coil in a process chamber by rotating a first Faraday shield and/or a second Faraday shield. A plasma process is performed in a process chamber(200) having a sidewall(210) made of dielectric. A plasma generator has a coil(310) disposed to enclose a side of the process, and an RF power applying member applying an RF power to the coil, thereby generating the plasma in the process chamber. Faraday shields(400,500) are disposed in parallel between the sidewall of the process chamber and the coil, and at least one slits(410,510) are formed on the Faraday shields, respectively.
申请公布号 KR100819023(B1) 申请公布日期 2008.04.02
申请号 KR20060117362 申请日期 2006.11.27
申请人 SEMES CO., LTD. 发明人 LEE, KI YUNG
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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