发明名称 Active pixel array with charge binning
摘要 A pixel array comprises pixels (10) arranged in columns. A pixel (10) comprises a photo-sensitive element (11) for generating charges responsive to electromagnetic radiation and a buffer amplifier (M2) for buffering a voltage proportional to the charges generated by the photo-sensitive element. A first switch (M3) selectively connects an output of the buffer amplifier to an active pixel mode column output line (9). A second switch (M1) selectively transfers at least part of the charges generated by the photo-sensitive element (11) to a passive pixel mode column output line (15). The pixel (10) can be selectively operated in a conventional, active pixel mode, and in a passive pixel/charge binning mode. The second switch (M1) can be a reset switch, with the second output line operable, on a time-shared basis, as a supply line for providing the reference voltage. Another embodiment has the first switch and the second switch connected to a single column output line which is operable, on a time-shared basis, as the active pixel mode column output line and as the passive pixel mode column output line.
申请公布号 GB0803278(D0) 申请公布日期 2008.04.02
申请号 GB20080003278 申请日期 2008.02.22
申请人 CMOSIS NV 发明人
分类号 H04N5/343;H04N5/347;H04N5/374 主分类号 H04N5/343
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