| 摘要 |
An analog memory is provided to reduce the number of second MOS transistors connected to a discharge line per one line, by dividing the discharge line into plural lines. A first, a second and a third memory block comprise a plurality of capacitors maintaining charges according to an input signal, an output line transmitting the charges and a plurality of MOS transistors(Min,Mout) switching connection state of the capacitor and the output line. When the capacitor and the output line are sequentially connected and a signal is outputted from the output line to a buffer circuit in the first memory block, all connections between the capacitor and the output line are interrupted in the second and the third memory block. And the output line in the first memory block is connected to the output line in the second memory block.
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