| 摘要 |
According to some embodiments of the invention, there is provided recessed transistors without semiconductor substrate fences formed on the sidewalls of a device isolation layer and methods of forming the same. The recessed transistors and methods provide a way of removing the fences of the semiconductor substrate from the sidewalls of the device isolation layer to increase the effective width of a channel region. The recessed transistors and methods include forming the device isolation layer on the semiconductor substrate to isolate an active region. Further, a channel-portion hole is formed in the active region so that the sidewall height of the channel-portion hole is greater in a width direction of the active region than in a length direction thereof. A gate pattern may further be formed across the active region such that it fills the channel-portion hole.
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