| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to shield between a main gate and an adjacent gate by forming a deep junction region through secondary high-concentration impurity ion implantation. A semiconductor substrate(210) has an isolation layer(220) formed in an isolation region to define an active region, and grooves(H) formed in the active region for defining a gate forming region. Gate lines(230 to 232) are formed in the grooves, and spacers(250) are formed on both walls of the gate line. A first junction region(240) is formed at both sides of the gate line in the surface of the substrate, and has a hale(H) between the spacers. A second junction region(260) is formed on a bottom surface of the hale.</p> |
