SEMICONDUCTOR DEVICE STRUCTURE USING SELF-ALIGNED EPITAXIAL LAYERS AND ITS MANUFACTURE METHOD

摘要

A method for manufacturing a semiconductor device structure is provided to form a channel of the device by self-aligned epitaxial growth, thereby minimizing a sub threshold current that is a problem of a nano device. A template epitaxial layer is grown on a semiconductor substrate(ST1), and then a template is grown on the template epitaxial layer(ST2). A self-aligned epitaxial layer is deposited on the template(ST3), and then is subjected to chemical mechanical polishing(ST4). The template is removed, and then an oxide layer is formed(ST5). A gate thin film is deposited on the oxide layer(ST6). A gate pattern is formed on the gate thin film, and then the gate pattern is passivate by an insulating layer(ST7).