发明名称 |
ETCHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES AND METHOD OF MAINTAINING THE SAME |
摘要 |
An etching apparatus for use in fabrication of a semiconductor device and a maintenance method thereof are provided to enhance a manufacturing yield and process reliability by preventing contamination of a reaction chamber due to a maintenance operation. A drain pipe(120) is connected to a reaction chamber(110) to discharge by-products generated from etching reaction. The drain pipe is supplied with vapor from a vapor supply pipe(130). A vapor control valve(140) is connected to the vapor supply pipe to regulate the supply of the vapor. A power generator is positioned on the upper portion of the reaction chamber, and a gate valve(160) is positioned between the reaction chamber and the drain pipe. A drain pump(170) is placed on the drain pipe.
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申请公布号 |
KR20080027608(A) |
申请公布日期 |
2008.03.28 |
申请号 |
KR20060092930 |
申请日期 |
2006.09.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO, WOONG |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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