| 摘要 |
PROBLEM TO BE SOLVED: To provide a stacked structure suitable as the forming structure of copper wiring in a very LSI wiring board or the like in which a wiring layer is isolatively formed through a barrier layer by a layer insulating part composed of a silicon compound-based low dielectric constant material, and in which the mutual adhesion among the base material composed of a silicon compound-based low dielectric constant material, the barrier layer and the wiring layer is excellent, to provide a very LSI wiring board applying this stacked structure, and to provide a method for efficiently forming them all in a wet process. SOLUTION: The stacked structure is formed by stacking an electroless copper plating layer is stacked on the base material composed of a silicon compound-based low dielectric constant material through a barrier layer formed by electroless plating, wherein the barrier layer is formed on the base material through a monomolecular layer of an organic silane compound and a palladium catalyst modifying the edge part on the barrier layer side in the monomolecular layer and is also composed of an electroless NiB plating layer and an electroless CoWP plating layer from the base material side. With this structure, the barrier layer having satisfactory adhesion and the electroless copper plating layer applied to a wiring layer or the like can be formed on the silicon compound-based low dielectric constant material all in a wet process by a simple step, and the stacked structure where the base material composed of a silicon compound-based low dielectric constant material, the barrier layer and the electroless copper plating layer such as a wiring layer are firmly adhered each other can be obtained. Further, the stacked structure is suitable as a forming structure of very LSI copper wiring, particularly, of copper wiring formed at a trench further narrowed compared with the conventional one. COPYRIGHT: (C)2008,JPO&INPIT
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