| 摘要 |
According to an aspect of the present invention, there is provided a semiconductor storage apparatus including: a semiconductor substrate; and a ferroelectric capacitor including: a bottom electrode disposed above the semiconductor substrate, a ferroelectric layer disposed on the bottom electrode, and a top electrode disposed on the ferroelectric layer. The ferroelectric capacitor includes: a first sidewall portion located on a position where the top electrode is in contact with the ferroelectric layer, and a second sidewall portion located above the first sidewall portion. The first sidewall portion forms a first angle with a top face of the ferroelectric layer. The second sidewall portion forms a second angle with the top face. The first angle is larger than the second angle.
|
