| 摘要 |
A semiconductor memory device is provided to decrease an off leakage current of an unselected cell array block, by applying a lower voltage than a voltage applied to a selected cell array block to the unselected cell array block. A semiconductor memory device comprises a plurality of cell array blocks(101-106). A boost voltage driving unit(201-206) supplies a boost voltage to the cell array block selectively. A control part(113) controls the operation of the boost voltage driving unit in response to a cell array block selection signal and a control signal defining a standby mode or a self refresh mode. The boost voltage driving unit supplies the boost voltage to all cell array blocks in an active mode, and supplies the boost voltage to only a selected cell array block in a standby mode or a self refresh mode, in response to the control signal and the cell array block selection signal.
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