发明名称 |
FLASH MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME |
摘要 |
A flash memory device and a method of programming the same are disclosed. The flash memory device includes an array of memory cells intersected by a plurality of bit lines and a plurality of word lines. A page buffer circuit includes a plurality of latches coupled to an even virtual bit line and an odd virtual bitline. The page buffer circuit is configured to load data into the array of memory cells responsive to a select circuit, which is structured to electrically couple at least some of the bit lines to the plurality of latches of the page buffer circuit.
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申请公布号 |
US2008074923(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20070855978 |
申请日期 |
2007.09.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI-TAE;CHOI JUNG-DAL |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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