发明名称 |
Nonvolatile Memory with Reduced Coupling Between Floating Gates |
摘要 |
A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures. An array having inverted-T shaped floating gates may be formed in a self-aligned manner.
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申请公布号 |
US2008074920(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20060534139 |
申请日期 |
2006.09.21 |
申请人 |
CHIEN HENRY;MATAMIS GEORGE;PHAM TUAN;HIGASHITANI MASAAKI;HORIUCHI HIDETAKA;LUTZE JEFFREY W;MOKHLESI NIMA;FONG YUPIN KAWING |
发明人 |
CHIEN HENRY;MATAMIS GEORGE;PHAM TUAN;HIGASHITANI MASAAKI;HORIUCHI HIDETAKA;LUTZE JEFFREY W.;MOKHLESI NIMA;FONG YUPIN KAWING |
分类号 |
G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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