METHOD FOR FORMING RESIST PATTERN

摘要

Disclosed is a method for forming resist pattern, which is characterized by comprising a step for forming a first resist film (2) by applying a positive resist composition to a supporting body (1), a step for forming a first resist pattern (3) by selectively exposing the first resist film (2) to light through a first mask pattern and developing the resulting, a step for forming a second resist film (6) by applying a negative resist composition containing an organic solvent (S'') including an alcohol-based organic solvent to the supporting body (1) on which the first resist pattern (3) has been formed, and a step for forming a resist pattern denser than the first resist pattern (3) by selectively exposing the second resist film (6) to light through a second mask pattern and developing the resulting.