| 摘要 |
<p>A method for patterning an anti-reflective coating by partial etching is provided to enhance reliability by reducing possibility of damage in an underlying layer. A layer stack is provided on a substrate(210). The layer stack consists of a thin film(220) formed on the substrate, an ARC(Anti-Reflective Coating) layer formed on the thin film, and a mask layer formed on the ARC layer. A pattern is formed on the mask layer. The pattern is transferred partially on the ARC layer by transferring the pattern to a depth less than the thickness of the ARC layer. The remaining part of the mask layer is removed. The pattern is completed by etching the ARC layer. The pattern is transferred to the thin film by consuming substantially the ARC layer.</p> |
