METHOD OF CLEANING DEPOSITION CHAMBER

摘要

A method for cleaning a deposition chamber is provided to improve operational efficiency of deposition equipment and to secure a stable process condition by reducing a cleaning process time. A wafer unloading process is performed to unload a wafer from a chamber for performing a deposition process under a predetermined deposition condition(10). A cleaning gas supply process is performed to supply a cleaning gas into the chamber without causing a change of deposition temperature and a change of process atmosphere(20). An excitation process is performed to excite the cleaning gas within the chamber(30). A reactant exhausting process is performed to exhaust a reactant by inducing a reaction between the excited cleaning gas and a deposit within the chamber(40).