HIGH-VOLTAGE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要
<p>A high-voltage transistor is provided to prevent generation of a parasitic transistor in the bottom of and on the edge of an isolation layer by including an extended active region. An isolation layer(120) is formed in a semiconductor substrate to define an active region(130). A gate electrode(142) is formed on the semiconductor substrate, maintaining a predetermined width and extended along the central portion of the active region. A second well(114) is formed in the semiconductor substrate at both sides of the gate electrode and partially extended to a portion under the isolation layer. The active region includes a first active region(130a) and a second active region(130b). The first active region separates the isolation layer, positioned under the gate electrode. The second active region is confined by the first active region and the isolation layer. A source/drain region can be formed in the second well, separated from the gate electrode by a predetermined interval.</p>
