发明名称 |
Forming phase change memories |
摘要 |
Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.
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申请公布号 |
US7348620(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20070706000 |
申请日期 |
2007.02.13 |
申请人 |
OVONYX, INC. |
发明人 |
CHIANG CHIEN;DENNISON CHARLES;LOWREY TYLER |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L45/00 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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