发明名称 Forming phase change memories
摘要 Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.
申请公布号 US7348620(B2) 申请公布日期 2008.03.25
申请号 US20070706000 申请日期 2007.02.13
申请人 OVONYX, INC. 发明人 CHIANG CHIEN;DENNISON CHARLES;LOWREY TYLER
分类号 H01L27/108;H01L29/76;H01L29/94;H01L45/00 主分类号 H01L27/108
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