| 摘要 |
A method of forming a carbon polymer film is provided to easily perform the manufacturing process of integrated next generation semiconductor devices by implementing the carbon polymer film using plasma CVD. In method for forming a carbon polymer film on a semiconductor substrate through a capacitive coupling plasma CVD device, carbon-hydrogen containing liquid monomer having a boiling point, about 20 ‹C to about 350 ‹C, is vaporized. The vaporized gas is provided to a CVD reaction chamber in which a substrate is located. The carbon polymer film(31) as a mask is formed on the substrate by polymerizing the gas. The liquid monomer not includes a benzene structure.
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