发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device that can inhibit transformation of an NiSi layer into a disilicide is to be provided. An NiSi layer is formed on gate electrodes and source/drain regions in both of a P-MOS transistor and a N-MOS transistor (a silicide layer formation step). A direct nitride layer is formed on an entire region including the NiSi layer (a nitride layer formation step). Then an element that can increase heat-resisting temperature of the NiSi layer is implanted into the NiSi layer (an element implantation step). As a result, heat-resisting property of the NiSi layer can be increased, and thereby the NiSi layer can be inhibited from being transformed into a disilicide.
|
申请公布号 |
US7348273(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20050094393 |
申请日期 |
2005.03.31 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
MATSUDA TOMOKO |
分类号 |
H01L21/28;H01L21/44;H01L21/285;H01L21/3205;H01L21/336;H01L21/4763;H01L21/8238;H01L27/092;H01L29/417;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|