| 摘要 |
<p>A thin film transistor for a shift register and a shift register including the same are provided to reduce parasite capacitance formed between a gate and drain electrodes by partially removing the drain electrodes. A thin film transistor for a shift register comprises a gate pattern(22,26a,26b,26c), a semiconductor layer(40a,40b,40c), a source pattern(62,65a,65b,65c), and a drain pattern(67,66a,66b,66c). The gate pattern includes a gate line, which extended in a first direction, and plural gate electrodes, which are connected to the gate line, on a substrate. The semiconductor layer is formed on the gate electrode. The source pattern includes a source line, which extended from the gate pattern in the first direction, and plural source electrodes extended to an upper surface of the semiconductor layer by branching from the source line. The drain pattern includes a drain line, which extended from the gate pattern in the first direction, and plural drain electrodes having a semiconductor exposing part, which is extended to the upper surface of the semiconductor layer by branching from the drain line, to expose the semiconductor at an inner region overlapped with the gate electrodes.</p> |
