发明名称 TRANSISTOR & METHOD OF MANUFACTURING THE SAME
摘要 A transistor and a method for manufacturing the same are provided to simplify the manufacturing process by utilizing a planarized active layer. An organic transistor includes a substrate(31), a gate electrode(32), an insulating layer(33), source and drain electrodes(35,36), and an active layer(34). The gate electrode(32) is formed on the substrate. The insulating layer is formed on the gate electrode and substrate. The source and drain electrodes are formed up to the height of the insulating layer formed on the gate electrode. The active layer covers a part of the source and drain electrodes by evenly forming on the insulating layer positioned at an upper portion of the gate electrode.
申请公布号 KR20080025847(A) 申请公布日期 2008.03.24
申请号 KR20060090519 申请日期 2006.09.19
申请人 LG ELECTRONICS INC. 发明人 CHOI, JI HUN;OH, HYOUNG YUN;SON, JEONG HUN
分类号 H01L33/02 主分类号 H01L33/02
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