| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a via hole machining method capable of forming a via hole reaching a bonding pad in a substrate of a wafer without melting the bonding pad. <P>SOLUTION: In the via hole machining method, the via hole reaching the bonding pad is formed in a wafer in which a plurality of devices are formed on the surface of a substrate and the bonding pad is formed on each device by irradiating the back side of the substrate with pulse laser beams. The energy density for one pulse of the pulse laser beams is set to a value so that the substrate is scattered but the bonding pad is not scattered, and the time interval of the pulse of the pulse laser beams is set to≥150 microsecond. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
