发明名称 |
IMPROVED NITRIDE LIGHT-EMITTING ELEMENT, AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light-extraction efficiency of a backside light emitting type nitride based light emitting element. <P>SOLUTION: A nitride based light emitting element 100 includes a conductive layer 112 disposed on an uppermost epitaxial layer 114 of the light emitting element 100 with this conductive layer 112 defining a contact area having a plurality of holes; and a reflector 116 aligned to this contact area. In addition, a mesh pattern is defined in the contact area by the plurality of holes. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008066727(A) |
申请公布日期 |
2008.03.21 |
申请号 |
JP20070228555 |
申请日期 |
2007.09.04 |
申请人 |
PALO ALTO RESEARCH CENTER INC |
发明人 |
CHUA CHRISTOPHER L;CHIHON YAN;JOHNSON NOBLE M;TEEPE MARK R |
分类号 |
H01L33/32;H01L33/38;H01L33/40 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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