发明名称 IMPROVED NITRIDE LIGHT-EMITTING ELEMENT, AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To improve the light-extraction efficiency of a backside light emitting type nitride based light emitting element. <P>SOLUTION: A nitride based light emitting element 100 includes a conductive layer 112 disposed on an uppermost epitaxial layer 114 of the light emitting element 100 with this conductive layer 112 defining a contact area having a plurality of holes; and a reflector 116 aligned to this contact area. In addition, a mesh pattern is defined in the contact area by the plurality of holes. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066727(A) 申请公布日期 2008.03.21
申请号 JP20070228555 申请日期 2007.09.04
申请人 PALO ALTO RESEARCH CENTER INC 发明人 CHUA CHRISTOPHER L;CHIHON YAN;JOHNSON NOBLE M;TEEPE MARK R
分类号 H01L33/32;H01L33/38;H01L33/40 主分类号 H01L33/32
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