| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with an insulating film which is excellent in electrical characteristic. SOLUTION: Gas with a noble gas content of 50% or larger and 99% or smaller which contains noble gas, nitrogen, and hydrogen or noble gas and ammonia, and contains no silicon is supplied into a vacuum vessel. Further, a high frequency is supplied into the vacuum vessel from a plate-like slot antenna which is installed in the upper part of the vacuum vessel so as to be opposed to a placement stand in the vacuum vessel and has a plurality of slots. Thereby, the gas in the vacuum vessel is turned to plasma. A silicon nitride film is formed by nitriding the surface of a silicon layer of the substrate by the plasma. Since high density plasma at a low electronic temperature can be generated in this manner, an insulation film with a favorable electric characteristic can be formed. COPYRIGHT: (C)2008,JPO&INPIT
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