THE NON VOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

A nonvolatile memory device and a program method thereof are provided to prevent a voltage from being dropped irregularly of every kind of signals applied to a bit line selection part during program operation and also to reduce total program time. An even bit line and an odd bit line are connected to a memory cell array(100). A register part(120) includes a first register(122) and a second register(124) storing specific data temporarily. A sensing node(SO) is connected to the bit lines and the registers, and senses voltage level of a specific bit line or voltage level of specific registers. A bit line selection part(110) includes a first voltage input stage applying a first voltage with specific voltage level to the even bit line and a second voltage input stage applying a second voltage with specific voltage level to the odd bit line, and applies the first voltage to the even bit line in response to an even discharge signal or applies the second voltage to the odd bit line in response to an odd discharge signal.