发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of cutting a wire easily, obtaining a bump electrode in an appropriate shape, and pulling out the wire from a capillary easily. <P>SOLUTION: The manufacturing method of a semiconductor device comprises: a process for forming a bump electrode while partially biting into a capillary on a pad by a wire through the capillary; a process for raising the capillary by 30-45 &mu;m; a process for raising the capillary and then moving the capillary laterally by 35-55 &mu;m for thinning the wire; a process for thinning the wire and then raising the capillary for pulling out the wire from the capillary; and a process for pulling the wire from the capillary, and holding the wire with a clamper for pulling in an upper direction and for cutting the wire. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066331(A) 申请公布日期 2008.03.21
申请号 JP20060239252 申请日期 2006.09.04
申请人 RENESAS TECHNOLOGY CORP 发明人 SHINKAWA HIDEYUKI
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址