VARIABLE RESISTANCE ELEMENT, NONVOLATILE MEMORY ELEMENT, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD OF WRITING DATA THEREIN

摘要

PROBLEM TO BE SOLVED: To provide a variable resistance memory device of a write-once type which has a novel arrangement.

SOLUTION: The variable resistance memory device comprises a first electrode, a second electrode and a thin film formed between the first and second electrodes. The thin film contains an oxide including a transition metal. When an electric pulse having a level not lower than a first level is applied to the thin film via the first and second electrodes, electric resistance between the first and second electrodes is irreversibly varied.

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