| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To attain enhancement in stability of data reading operation when operation voltage is reduced. <P>SOLUTION: In a memory cell array 102 which is constituted of flash memory, a pair of a positive memory cell 100 and a negative memory cell 101, to which data in mutually opposite phases are written, is plurally provided, and bit lines 105, 107 and I/O lines 124, 129 connected to the memory cells of a data reading object are charged, and then a potential WL of a word line 103 connected to the data reading object memory cells is raised. Hence one of the potentials BL, BLN of the I/O lines 124, 129 begins to fall according to the currents flowing through the data reading object memory cells 100, 101 according to the written data. When one of the potentials BL and BLN falls below the circuit threshold of a sense amplifier, reading data is established, and the established reading data is output as a sense amplifier output signal SAOUT. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
