| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition improved in resolution, development defects and outgassing and a pattern forming method using the same, which are a positive resist composition suitable for use in an ultramicrolithography process for producing VLSI or high-capacity microchips or in other photofabrication processes and a pattern forming method using the same. <P>SOLUTION: The positive resist composition (A) comprises a resin having a repeating unit in which a sulfonium salt structure capable of generating an acid upon irradiation with an actinic ray or radiation is linked to a principal chain by a linking group which degrades under the action of an acid. <P>COPYRIGHT: (C)2008,JPO&INPIT |
