| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metallized aluminum nitride substrate, wherein the adhesive strength between a metal layer and a substrate is high, and insulation among fine circuit patterns can be obtained surely. <P>SOLUTION: The aluminum nitride substrate is heated and oxidized, in an atmosphere in which the partial pressure of oxygen is 10<SP>-4</SP>atmosphere or lower, preferably at 1,150 to 1,500°C for five hours and longer, to form an aluminum oxide layer of about 3 to 15 μm in thickness, from the surface. A metal film is formed on the obtained aluminum nitride substrate whose surface is oxidized, and a part of the metal film is removed by ion milling, laser processing, or the like, and a wiring pattern is formed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
