| 摘要 |
PROBLEM TO BE SOLVED: To make quality of a metal film almost constant which is formed on a semiconductor substrate of different thickness, in a method of manufacturing a semiconductor device which includes a process for forming the metal film on the semiconductor substrate of different thickness, using a sputtering equipment equipped with a clamp. SOLUTION: The manufacturing method of a semiconductor device includes a metal film forming process in which a metal film 29 is formed on semiconductor substrates 23-1 and 23-2 different in thickness, using a sputtering equipment 10 equipped with a clamp 25 for fixing the semiconductor substrates 23-1 and 23-2 different in thickness, on a stage 21. The clamp 25 is insulated, and the stage 21 is allowed to be a ground potential through a variable resistor 26. When forming the metal film 29, the resistive value of the variable resistor 26 is adjusted so that the current flowing the variable resistor 26 comes to be a specified value. COPYRIGHT: (C)2008,JPO&INPIT
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