| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can reduce an occupation area and can shorten an inspection period. SOLUTION: The method for manufacturing a semiconductor device comprises steps of forming a resistance pattern 18a for a first inspection on a semiconductor substrate 1 located at a scribe line, by conducting a first impurity introducing process to dope an impurity into the semiconductor substrate 1 located at a first channel region 8a; forming a resistance pattern 18b for a second inspection on the semiconductor substrate 1 located at the scribe line by conducting a second impurity introducing process, in the impurity concentration different from that of the first impurity introducing process to dope an impurity to the semiconductor substrate 1 located at a second channel region 8b; and forming a wiring pattern 12c for connecting in parallel the resistance pattern 18a for the first inspection and the resistance pattern 18b for the second inspection. COPYRIGHT: (C)2008,JPO&INPIT
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