发明名称 FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of excellently depositing a film by suppressing generation of foreign matters when depositing the film on a substrate. SOLUTION: The film deposition apparatus comprises a sputtering system for emitting sputtering particles for depositing a film from a target material by applying ion particles to the target material, a substrate holding member which is movable while holding a substrate and capable of arranging the substrate to the position at which sputtering particles from the target material can be fed, and a predetermined member which is arranged between the target material and the substrate and has an opening for allowing at least a part of the sputtering particles from the target material to pass through. The predetermined member is formed of the same material as the target material. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008056975(A) 申请公布日期 2008.03.13
申请号 JP20060233848 申请日期 2006.08.30
申请人 SEIKO EPSON CORP 发明人 ASUKE SHINTARO
分类号 C23C14/00;H01L21/768 主分类号 C23C14/00
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