ONE-TRANSISTOR DRAM FLOATING-BODY CELL WITH A BIAS GATE IN A BULK SUBSTRATE AND METHODS OF FABRICATING AND OPERATING THE SAME

摘要

One-transistor (IT) (104) capacitor-less DRAM cells (100) each include a MOS transistor (104) having a bias gate layer (106) that separates a floating body- region (108) from a bulk base substrate (102). The MOS transistor functions as a storage device, eliminating the need of the storage capacitor. Logic "1" is written to and stored in the storage device by causing majority carriers (holes in an NMOS transistor) to accumulate and be held in the floating body region next to the bias gate layer, and is erased by removing the majority carriers from where they are held.