| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same having a fin transistor capable of suppressing OFF current and connection leak. SOLUTION: The semiconductor device is provided with the fin transistor equipped with an active region 100a defined so as to have a crank shape by an STI (shallow trench isolation) region 15 formed on a semiconductor substrate, and having an upper surface higher than the upper surface of the STI region; a source region and drain region 20 formed on both ends of the active region 100a with the crank shape, a channel region formed on a region pinched by the source region 20 and the drain region 20 in the active region 100a, and a gate electrode which covers the upper surface and the side surfaces of one part of the central part fa and both sides fb, fc of the active region 100a including the channel region. COPYRIGHT: (C)2008,JPO&INPIT
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