| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic thin-film transistor having high production efficiency under an atmospheric pressure and superior in transistor characteristics, and to provide the organic thin-film transistor manufactured by the manufacturing method. SOLUTION: The organic thin-film transistor has a gate electrode, an insulating layer, source and drain electrodes, and an organic semiconductor layer on a supporter. In the manufacturing method of the organic thin-film transistor, atmospheric pressure plasma processing is carried out on a substrate on which the source and drain electrodes have previously been patterned, and the surfaces of the electrodes are processed with an organic compound, having a group chemically bonded to a metal forming each of the source and drain electrodes. COPYRIGHT: (C)2008,JPO&INPIT
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