发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
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申请公布号 |
US2008061327(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070979667 |
申请日期 |
2007.11.07 |
申请人 |
CHUNGHWA PICTURE TUBES., LTD. |
发明人 |
KUO CHING-YEH;CHENG TSUNG-CHI;LEE YU-CHOU;SHIH YEA-CHUNG;TSAO WEN-KUANG;CHUNG HSIANG-HSIEN;HSU HUNG-YI;CHANG JUI-CHUNG |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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