| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for use in the production process of a semiconductor such as an IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes and a pattern forming method using the same, and to provide a positive resist composition which ensures less deterioration in profile and line edge roughness in liquid immersion exposure as well as in ordinary exposure (dry exposure) and exhibits good conformability to an immersion liquid in liquid immersion exposure and a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises (A) a resin of which the solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a resin having a specific structure and (D) a solvent. <P>COPYRIGHT: (C)2008,JPO&INPIT |
