| 摘要 |
A method of removing a photoresist in a semiconductor manufacturing process including at least one of the following steps: sequentially depositing an oxide film and a metal film over a semiconductor substrate. Depositing an anti-reflection film and a photoresist over the metal film. Patterning the photoresist to form a photoresist pattern. Prompting a surface reaction of the semiconductor substrate using a chuck to remove a polymer film formed on the surface of the photoresist pattern. Removing the photoresist pattern by a plasma etching process while spraying a photoresist removal gas containing fluorine to cause a reaction between aluminum and fluorine.
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