发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE USING NONVOLATILE STORAGE ELEMENTS TO WHICH DATA CAN BE WRITTEN ONLY ONCE
摘要 A nonvolatile semiconductor memory device includes a nonvolatile storage element to which data is inhibited from being rewritten, a read operation control circuit which captures a read operation instruction signal in synchronization with an external input clock, and a write operation control circuit to which a write operation instruction signal is input asynchronously with the external input clock. The read operation instruction signal gives an instruction to start a read operation to read data out of the nonvolatile storage element, and the write operation instruction signal gives an instruction to start a write operation to write data to the nonvolatile storage element. The device further includes a reset circuit which resets an operation of the read operation control circuit upon receiving the write operation instruction signal.
申请公布号 US2008062782(A1) 申请公布日期 2008.03.13
申请号 US20070733933 申请日期 2007.04.11
申请人 NAMEKAWA TOSHIMASA;ITO HIROSHI;NAKANO HIROAKI;WADA OSAMU;NAKAYAMA ATSUSHI 发明人 NAMEKAWA TOSHIMASA;ITO HIROSHI;NAKANO HIROAKI;WADA OSAMU;NAKAYAMA ATSUSHI
分类号 G11C7/00 主分类号 G11C7/00
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