发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE USING NONVOLATILE STORAGE ELEMENTS TO WHICH DATA CAN BE WRITTEN ONLY ONCE |
摘要 |
A nonvolatile semiconductor memory device includes a nonvolatile storage element to which data is inhibited from being rewritten, a read operation control circuit which captures a read operation instruction signal in synchronization with an external input clock, and a write operation control circuit to which a write operation instruction signal is input asynchronously with the external input clock. The read operation instruction signal gives an instruction to start a read operation to read data out of the nonvolatile storage element, and the write operation instruction signal gives an instruction to start a write operation to write data to the nonvolatile storage element. The device further includes a reset circuit which resets an operation of the read operation control circuit upon receiving the write operation instruction signal.
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申请公布号 |
US2008062782(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070733933 |
申请日期 |
2007.04.11 |
申请人 |
NAMEKAWA TOSHIMASA;ITO HIROSHI;NAKANO HIROAKI;WADA OSAMU;NAKAYAMA ATSUSHI |
发明人 |
NAMEKAWA TOSHIMASA;ITO HIROSHI;NAKANO HIROAKI;WADA OSAMU;NAKAYAMA ATSUSHI |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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