发明名称 |
Phase change random access memory and method of testing the same |
摘要 |
Provided is a method of testing a phase change random access memory (PRAM). The method may include providing a plurality of PRAM cells each coupled between each of a plurality of first lines and each of a plurality of second lines intersecting the first lines, selecting at least one of the plurality of first lines while deselecting the remaining first lines and the plurality of second lines, pre-charging the selected at least one of the plurality of first lines to a predetermined or given voltage level, and sensing a change in the voltage level of the selected first line while supplying a monitoring voltage to the selected first line.
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申请公布号 |
US2008062741(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070898125 |
申请日期 |
2007.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHOI BYUNG-GIL;CHO BEAK-HYUNG;KIM DU-EUNG;CHOI CHANG-HAN;RO YU-HWAN |
分类号 |
G11C29/44 |
主分类号 |
G11C29/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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